PRODUCTS
适用于半导体电子领域的研发和实验，以及在光通信领域的半导体激光器DFB-LD的量产方面应用广泛。该设备实现了50kV的高分辨率及高产能。
光斑直径：< 2nmΦ (for Academic and R&D)
< 3nmΦ (for Production)
加速电压：50kV, 30kV
样品尺寸：适用于8寸以下以及碎片
| Electron Emitter／Acceleration voltage | TFE (ZrO／W)／5～50kV |
|---|---|
| Min. beam diameter | 2.0nm (for Academic and R&D) 3.0nm (for Production) |
| Scan method | Vector scan (x, y) (Standard) Vector scan (r, θ), Raster scan，Spot scan (Optional) |
| Advanced lithography functions (Optional) | Field size modulation lithography, axial symmetry pattern lithography |
| Field size | 30μm□ - 1000μm□ (50kV) (for Academic and R&D) 30μm□ - 1500μm□（50kV) (for Production) |
| Work piece size | 4, 6, 8inchΦ |
| CAD software | Dedicated CAD (Standard), GDSⅡconversion (Optional), DXF conversion(Optional) |
| OS | Windows |